<$emi-(2onclu<2toi ^products., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the rf line npn silicon rf power transistor . . designed primarily for application as a high-power linear amplifier from 1.5 to 30 mhz. in single sideband mobile, marine and base station equipment. ? low-cost, common-emitter to-220ab package ? specified 28 volt, 30 mhz performance ? output power - 40 w (pep) power gain = 15 db mm efficiency *? 40% min ? intermodulation distortion (a 40 w (pep) ? imd = -30db (max) ? 30:1 vswr load mismatch capability at rated output power and supply voltage maximum ratings rating symbol value unit col ector emitter voltage vceo & vclc col ;ector-8ase voltage vc8o 6s vdc emitter base voltage vf.bo 40 vdc collector current - continuous l jo adc withstand current - 60 adc !t " sosi total device dissipation nd "typ? mcm01 010 ar unilco 3 hs 0008 MRF486 40 w (pep)-30mhi rf power transistor npn silicon / a 1 1 r l? *?? v -* q ? sore i i 3 j i? jtlxm ^"l4 i j 1 k ?~ win * -^" iso n u- ico s ?n xmjn80h1ng jud rouuwmc p6h ah usw 1912 am1kxling omcnskm imcm ao imeguumhes ak a1.10wcd nmetma ; mm m w klu 1 ih ; i^u * i i?8 ^?n j dm f osn i~ ["tm iaa i 03? i am c 4w 4j1 [ old | oib f iti m oi? ?t? a ic 211 oas tin ? ib ib 0111 , oltt 1 ob oss 0014 | 0013 1 1iiv 1477 0100 ok l 111 ix god ok f nj semi-conductors is believed to be both accurate and reliable at the time ofgoing to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. vi .semi-conductors entourages customers to verity that datasheets are current before plating orders.
iMRF486 electrical characteristics(tc - 25c unl.?othm.,,. noted) symbol tyii off characteristics collector-emitter breakdown voltage hc - 50 madc, ib ?0) collector-emitter breakdown voltage hc-somaoc. vbe *o> collector-ba$e breakdown voltage dc" 50 madc. ie -01 emitter-saw breakdown voltage (ie -5.0 madc, ic -0) collector cutoff currant (vce - 28 vdc. v8f. ? 0, tc - 26c) vibriceo vi?r)ces vjbricbo v<8r)680 !ces 35 65 65 40 - on characteristics oc current gain (1c - 2 0 adc, vce - 5 0 vdcl "fe 10 - - ? ~ - - - ~ ~ 10 vdc vdc vdc vdc madc 40 ? ~ dynamic characteristics output caokitance (vcb ? 27 vdc, ie - 0, f - 1 0 mhil cob - 130 200 of functional tests common-emitter amplifier power gain ivgc ? 28 vdc,pout-40w (pepi.fi -30mhz. f2 - 30 001 mhi, icq - 40 madcl collector efficiency (vcc ? 28 vdc. p0ut ? 40 w (pepi.i1 = 30 mhi, (2 ? 30 001 mhz, icq - 10 madc) intarmodulation distortion (11 ivcc ? 28 vdc. pout - 40 w ipepi. fl - 30 mhj. 12 ? 30 001 mhz. icq = 40 madcl g|.e "" imd(d3l is 40 175 45 -36 -30 db db 111 to mil-std-1311 vtrnon a. ten metnotj 2204b, two tone, reference each tone figure 2 - output power ?ertut input power c,n, input power (watts) figure 3 - output power ?nuisupply voltage figure 4 - power gain ?er?js frequency pm1. output power (watts plpt ? ^ xf. x 1.1 imo icq x^ g. 30 ooi d3) - -] ? mma lx-" r~ "~ yu. 16 ^^ ^ >xx' 20 24 28 vcc. supf iv voltage ivoitsi gp[. power gaifhdtl _ s s s ? ? ? *-^? **, "* ?? ?? v cc-2! 'co = 40 "v. vdc wpep ^\0 30 so 10 10 is 20 30 f frequcncviiihl)
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